Chemical Vapor Deposition ·
SiH₄(g) → Si(s) + 2H₂(g)
un
seel
.com · LPCVD polysilicon · 620°C · 0.2 Torr
Temp
25 °C
Film
0 nm
Regime
—
SiH₄ precursor
Hot substrate
Deposited Si film
H₂ byproduct
▶ Play
←
→
🔇 Unmute
Reset
Un
seel
.com · Chemical Vapor Deposition (CVD)